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| MBR1630-MBR1660 Vishay Lite-On Power Semiconductor 16A Schottky Barrier Rectifiers Features D Schottky barrier chip D Guard ring die constuction for transient D Low power loss, high efficiency D High current capability and low forward voltage D High surge capability D For use in low voltage, high frequency inverters, D free wheeling, and polarity protection application Plastic material - UL Recognition flammability classification 94V-0 drop protection 94 9537 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage g =Working peak reverse voltage DC Blocking lt =DC Bl ki voltage Test Conditions Type MBR1630 MBR1635 MBR1640 MBR1645 MBR1650 MBR1660 TC=125C Symbol VRRM =VRWM V =VR Value 30 35 40 45 50 60 150 16 -65...+150 Unit V V V V V V A A C Peak forward surge current Average forward current Junction and storage temperature range IFSM IFAV Tj=Tstg Electrical Characteristics Tj = 25_C Parameter Forward voltage g Test Conditions IF=16A, TC=25C IF=16A, TC=125C IF=16A, TC=25C IF=16A, TC=125C TC=25C TC=125C TC=25C TC=125C VR=4V, f=1MHz TL=const. Type Symbol Min MBR1630-MBR1645 VF VF MBR1650-MBR1660 VF VF MBR1630-MBR1645 IR IR MBR1650-MBR1660 IR IR CD MBR1630-MBR1645 RthJC MBR1650-MBR1660 RthJC MBR1630-MBR1640 dV/dt MBR1645-MBR1660 dV/dt Typ Max 0.63 0.57 0.75 0.65 0.2 40 1.0 50 Unit V V V V mA mA mA mA pF K/W K/W K/W K/W Reverse current Diode capacitance Thermal resistance junction to case Voltage rate of change g g ( Rated VR ) 450 1.5 3 1000 10000 Rev. A2, 24-Jun-98 1 (4) MBR1630-MBR1660 Vishay Lite-On Power Semiconductor Characteristics (Tj = 25_C unless otherwise specified) IFAV - Average Forward Current ( A ) 20 C D - Diode Capacitance ( pF ) 16 12 4000 Tj = 25C f = 1 MHz 1000 8 4 0 0 100 50 100 150 15354 0.1 1.0 10 100 15351 Tamb - Ambient Temperature ( C ) VR - Reverse Voltage ( V ) Figure 1. Max. Average Forward Current vs. Ambient Temperature 50 Figure 4. Typ. Diode Capacitance vs. Reverse Voltage 100 I R - Reverse Current ( mA ) IF - Forward Current ( A ) MBR1630-MBR1645 Tj = 125C 10 MBR1650-MBR1660 10 1.0 Tj = 75C 1.0 Tj = 25C IF Pulse Width = 300 s 2% Duty Cycle 0.1 Tj = 25C 0.1 0.2 15352 0.4 0.6 0.8 1.0 15355 0.01 0 20 40 60 80 100 120 140 VF - Forward Voltage ( V ) Percent of Rated Peak Reverse Voltage (%) Figure 2. Typ. Forward Current vs. Forward Voltage IFSM - Peak Forward Surge Current ( A ) 300 250 200 150 100 50 0 1 15353 Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage 10 Number of Cycles at 60 Hz 100 Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles 2 (4) Rev. A2, 24-Jun-98 MBR1630-MBR1660 Vishay Lite-On Power Semiconductor Dimensions in mm 14469 Case: molded plastic Polarity: see diagram Approx. weight: 2.24 grams Mounting position: any Marking: type number Rev. A2, 24-Jun-98 3 (4) MBR1630-MBR1660 Vishay Lite-On Power Semiconductor Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 4 (4) Rev. A2, 24-Jun-98 |
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